The Process Probe™ 1530 and 1535 instrumented wafers are used to monitor in situ temperatures for a wide range of processes, including cold wall, RTP, sputtering, CVD, plasma strippers and epitaxial reactors. The Process Probe 1530 and 1535 provide direct, real-time measurement of wafer temperature during each critical step of the process cycle. With this comprehensive temperature data, process engineers can characterize and fine tune process conditions, driving improved process equipment performance, wafer quality and yield.

Applications
Process development, Process qualification, Process tool qualification, Process tool matching

Cold wall thin film process chambers (1530), Hot wall thin film process chambers (1535) | 0-1100°C

Parameter Name	Parameter Value
Type	temperature
Applications	measurement
Other characteristics	real-time